PART |
Description |
Maker |
TC5816BFT |
16 MBIT (2M x 8BITS) CMOS NAND FLASH E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
TC58V64ADC |
64-MBIT (8M X 8BITS) CMOS NAND E PROM (8M BYTE SmartMedia)
|
TOSHIBA[Toshiba Semiconductor]
|
TC58256FTI |
256-MBIT (32M x 8BITS) CMOS NAND EEPROM
|
Toshiba Semiconductor
|
TC5816BFT |
16 MBIT (2M x 8BITS) CMOS NAND FLASH E2PROM 16兆比特(2米x 8位)的CMOS NAND闪存E2PROM
|
Toshiba Corporation Toshiba, Corp.
|
TC58256DC TC58256FT |
256M Bit (32M×8Bits ) CMOS NAND EEPROM(32M×8位与非EEPROM) 256M比特2M的8位)的CMOS闪存EEPROM的(32M的8位与非的EEPROM
|
Toshiba Corporation Toshiba, Corp.
|
TC58V64BDC |
64-MBIT (8M x 8 BITS) CMOS NAND E PROM (8M BYTE SmartMedia ) 64-MBIT (8M 8 BITS) CMOS NAND E2PROM (8M BYTE SmartMediaTM) 64-MBIT (8M x 8 BITS) CMOS NAND E2PROM (8M BYTE SmartMediaTM)
|
TOSHIBA[Toshiba Semiconductor]
|
TC58V64BDC |
64-MBIT (8M 8 BITS) CMOS NAND E2PROM (8M BYTE SmartMediaTM)
|
Toshiba Corporation
|
TH58V128DC |
128 Mbit (16M x 8bit) CMOS NAND E2PROM (16M BYTE SmartMedia)
|
Toshiba Semiconductor
|
HY62KF0840 |
High speed, super low power and 4M bit full CMOS SRAM organized as 512K words by 8bits
|
HYNIX
|
TH58512FT |
A Single 3.3V 512MBit(32M × 8Bit) CMOS NAND EEPROM(单片3.3V 512M32M × 8 CMOS NAND EEPROM)
|
Toshiba Corporation
|
AM27X128 AM27X128-120JC AM27X128-120JI AM27X128-12 |
CMOS Quad 2-Input NAND Schmitt Triggers 14-CDIP -55 to 125 16K X 8 OTPROM, 90 ns, PDIP28 CMOS Quad 2-Input NAND Schmitt Triggers 14-SOIC -55 to 125 128千比特(16亩8位)的CMOS ExpressROM装置 CMOS Quad 2-Input NAND Schmitt Triggers 14-SOIC -55 to 125 16K X 8 OTPROM, 150 ns, PDIP28 CAPACITOR .0033UF UV BOX TYPE 16K X 8 OTPROM, 150 ns, PQCC32 CMOS Quad 2-Input NAND Schmitt Triggers 14-TSSOP -55 to 125 128 Kilobit (16 K x 8-Bit) CMOS ExpressROM Device
|
SPANSION LLC PROM Advanced Micro Devices, Inc. AMD[Advanced Micro Devices]
|
AM41PDS3228D |
32 Mbit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Page Mode Flash Memory and 8 Mbit From old datasheet system
|
AMD Inc
|